This page updated 10 Feb 2020

Bipole3-Basic and 'full' Bipole3-V6P1 overview

The Free Bipole3-Basic software has been developed to provide a simpler and easier to use version compared to the full Bipole3 software. Bipole3-Basic is aimed primarily at post-graduate level students and as an educational tool for engineers in industry. It enables rapid simulation of semiconductor devices including diodes, photodiodes, BJTs, HBTs, MOSFETs.

The constraints imposed on Bipole3-Basic make it easy to use compared to the full Bipole3 software.

Bipole3-Basic and 'full' Bipole3 comparisons

Important Bipole3-Basic features

A full range of analytic double quasi gaussian impurity profiles (two for donor and two for acceptor concentrations) are available for the active region of the BJT. These may be used to give a good approximation to profiles obtained from measured or simulated results.

Temperature range from -50 C to + 50 C allowed.

SiGe HBT devices may be simulated with constant or graded Ge fractions across the base region

polysilicon emitter simulation is included

Range of options for physical models (band-gap narrowing, mobility vs doping and temperature, lifetime vs doping)

Integrated circuit BJTs and HBTs with single or double base contacts may be simulated using user specified values or built-in layout design rules

Avalanche multiplication is included for e-b and b-c junctions

MOSFET channel implants for threshold voltage adjustment are allowed

Full Bipole3-V6P1 software features additional to those in Bipole3-Basic

The above temperature constraints are removed

Both analytic and tabular impurity profile input (obtained from measured or process simulated data). This enables good representation of real devices for which the impurity profile distributions are available from measurements (e.g. SIMS) or process simulation.

Full range of Ge(x) distributions (including tabular) for HBT devices

Complete access to all physical models and their parameters (band-gap, mobility vs doping, mobility vs temperature, etc.)

Full range of integrated mask layouts with all user specified dimensions

Options for different doping profiles in extrinsic base regions

Selective Implanted Collector (SIC) layers included

Non equilibrium transport model for ionization multiplication

Tunnelling across the e-b junction

Hydrodynamic model for very high frequency BJTs and HBTs (ft above 70 GHz)

Non conventional layouts (lateral PNP, circular emitter, interdigitated)

Low doped Drain (LDD) option for MOSFETs is only available in full Bipole3

Extension Modules for Bipole3 include SPICE model generation and additional full 2D simulation for sidewall injection. Due to lack of use, some of the earlier extension modules are no longer available.

Download details

The download contains both the BIPGRAPH post-processor for examining results of simulations, plus bgd files of many already simulated devices which can be loaded and examined in the graphics package.

To access Bipole3-Basic which runs on Windows 10 (and also on Windows XP),

Download (4.5Mb)

To access full Bipole3-V6p1

Download Bipole3V6p1.7z (9 Mb)

We would appreciate reports of any problems in downloading (see below for email contact).

Both Bipole3-Basic64 and Bipole3-V6P1 downloads contains the complete executable package including a detailed Reference Manual and Tutorial Guide; they also includes the graphics post-processor (and examples). The zip file should be downloaded and the contents then be extracted using the

7-Zip file archiver

or other compression software to a new folder. Note that the folder to which this file is saved depends on your browser settings; it is typically saved by default to the \Downloads folder.

Note the details in the README file, particularly concerning the Java runtime environment.

We value feedback on use of this software. Please email any comments (positive or negative) to